This paper describes the heat transfer from a heated microcantilever to the substrate and the resultant temperature distributions. A four-point probe platinum resistive thermometer having a 140 nm lateral resolution has been fabricated on the SiO2-coated silicon substrate. The estimated temperature coefficient of resistance (TCR) of the thermometer is 0.0011 K−1, approximately one third of the bulk value. When the heated cantilever scans over the thermometer, up to 70% of the cantilever power is transferred to the substrate through the air, heating up the substrate. The maximum substrate temperature rise measured with the thermometer is around 7 K. From the force-displacement experiment, the effective contact thermal conductance was estimated to be around 40 ± 20 nW/K. The obtained results will help further understanding of thermal behavior of the heated cantilever during the scanning and its effect on the substrate.

You do not currently have access to this content.