We present a simple and cost effective approach using electrochemical impedance spectroscopy (EIS) for accurate pore size estimation of silicon based nano-pores. This method accounts for the capacitor effects of the electrical double layer and the resistor effects of the ion concentration inside the nano-channel. The nano-pore impedance was modeled as the electrolyte charge transfer resistance Rs in a series connection with a parallel ion diffusion circuit Rf with a constant phase element (CPE) that models the behaviour of the double layer. The EIS analysis that has been widely employed to measure the energy storage and dissipation properties of a physicochemical system in frequency domain was adopted to sense the impedance parameters of the nano-pore. The nano-pore size was then estimated based on the impedance parameters. The accuracy of the estimated nano-pore size was verified by the TEM image.
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ASME 2008 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference
August 3–6, 2008
Brooklyn, New York, USA
Conference Sponsors:
- Design Engineering Division and Computers in Engineering Division
ISBN:
978-0-7918-4328-4
PROCEEDINGS PAPER
Nanopore Size Estimation Using Electrochemical Impedance Spectroscopy Analysis
Gou-Jen Wang,
Gou-Jen Wang
National Chung-Hsing University, Taichung, Taiwan
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Ming-Chun Chien
Ming-Chun Chien
National Chung-Hsing University, Taichung, Taiwan
Search for other works by this author on:
Gou-Jen Wang
National Chung-Hsing University, Taichung, Taiwan
Ming-Chun Chien
National Chung-Hsing University, Taichung, Taiwan
Paper No:
DETC2008-49699, pp. 731-736; 6 pages
Published Online:
July 13, 2009
Citation
Wang, G, & Chien, M. "Nanopore Size Estimation Using Electrochemical Impedance Spectroscopy Analysis." Proceedings of the ASME 2008 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference. Volume 4: 20th International Conference on Design Theory and Methodology; Second International Conference on Micro- and Nanosystems. Brooklyn, New York, USA. August 3–6, 2008. pp. 731-736. ASME. https://doi.org/10.1115/DETC2008-49699
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