In this paper, locally heated closed-loop AuSn solder-line bonding method was proposed and evaluated for a low-temperature, high strength, and hermetic MEMS packaging. We fabricated two different test specimens including substrate-heated specimen and locally heated specimen in order to verify the performance of locally heated method. In air tightness test, the substrate-heated specimen and locally heated specimen show the maximum leak rate of 13.5±9.8×10−10mbar-l/s and 18.8±9.9×10−10mbar-l/s with the same internal volume of 6.89±0.2×10−6l, respectively. In the critical pressure test, any fracture was not found in the bonded specimens at applied pressure of 10±2bar. From these results, we approximately extracted the bonding strength of the proposed bonding process of 3.53±0.07MPa. By EDS (Energy Dispersive X-ray Spectrometer) analysis at bonded interface, we found that bonded interface (between AuSn solder and Ti/Au layer) of substrate-heated specimen was stronger than that of locally heated specimen.
- Electronic and Photonic Packaging Division
Locally Heated Low Temperature Wafer Level MEMS Packaging With Closed-Loop AuSn Solder-Lines
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Seo, YH, Kang, TG, Cho, Y, Kim, S, Kim, GH, & Bu, JU. "Locally Heated Low Temperature Wafer Level MEMS Packaging With Closed-Loop AuSn Solder-Lines." Proceedings of the ASME 2002 International Mechanical Engineering Congress and Exposition. Electronic and Photonic Packaging, Electrical Systems Design and Photonics, and Nanotechnology. New Orleans, Louisiana, USA. November 17–22, 2002. pp. 33-37. ASME. https://doi.org/10.1115/IMECE2002-39267
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