This paper presents thermal design optimization of an insulated gate bipolar transistor (IGBT) integrated power electronic module (IPEM). A commercially available finite element package was used to create a 3D geometric layout of the IGBT module. Thermal simulations were performed under different forced air convection conditions, and for both single and double-sided cooling, to study the effects on the hot-spots and maximum temperature rise of the module. The design optimization for the module was performed by varying parameters (choice of materials and layer thicknesses) and studying their effect on the thermal performance of the module. The results of these studies were several improved designs for the module.

1.
Lain-Tuu Yeh and Richard C. Chu, Thermal Management of Microelectronic Equipment, 2002, ASME Press.
2.
Y.F. Pang, E.P. Scott, J.D. van Wyk and Z.X. Liang, “Assessment of Some Integrated Cooling Mechanisms for an Active IPEM,” ASME International Mechanical Engineering Congress and Exposition (IMECE), 2004, paper # 59342.
3.
F.P. Incropera and D.P. Dewitt, Fundamentals of Heat and Mass Transfer, 4th Edition, 1996, John Wiley and Sons, pp. 76
4.
Y. Pang and E. P. Scott, “Thermal Characterization and Optimization of Active System IPEM,” Proceedings of ASME International Mechanical Engineering Congress & Exposition, 2003, paper # 41415.
5.
M.G. Petch and R. Agarwal, “Electronic Packaging Materials and Their Properties,” Physical Architecture and Packaging of Microelectronic Systems, 2003, Prentice Hall.
This content is only available via PDF.
You do not currently have access to this content.