Radio-frequency microelectromechanical systems (RF MEMS) are widely used in contact actuators and capacitative switches. In these devices, the membrane deforms under electrostatic actuation. With time, these devices undergo creep deformation that reduces the gap between the metallic membrane and the electrodes, and can result in self pull-in at lower applied voltages than for normal pull-in. It is important to accurately model creep in RF MEMS devices to understand their long-term behavior and to improve their reliability. In this paper, we extend a cell-centered finite volume approach previously developed to describe linear elastic solids to model visco-plastic and creep phenomena. The finite volume discretization produces a set of algebraic equations, which is solved using a biconjugate gradient stabilized (BCGSTAB) solver. Test cases are first presented verifying the accuracy of the method. Results are then presented in this paper for the long-term creep behavior of a fixed-fixed MEMS device.
Finite Volume Method for Simulation of Creep in RF MEMS Devices
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Das, S, Koslowski, M, Mathur, SR, & Murthy, JY. "Finite Volume Method for Simulation of Creep in RF MEMS Devices." Proceedings of the ASME 2011 International Mechanical Engineering Congress and Exposition. Volume 11: Nano and Micro Materials, Devices and Systems; Microsystems Integration. Denver, Colorado, USA. November 11–17, 2011. pp. 119-128. ASME. https://doi.org/10.1115/IMECE2011-62660
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