Imaging technology has been in revolutionary progresses in decades with well-developed semiconductor and memory industries. Silicon sensors are used in most of camera and DV, since silicon is the best material for visible light imaging (wavelength from 400nm∼700nm). Short wave infrared (SWIR) requires indium gallium arsenide (InGaAs), composed of chemical compounds including indium arsenide (InAs) and gallium arsenide (GaAs), to cover SWIR spectrum. Wavelength of typical SWIR is defined between 0.7um and 2.5um; SWIR cameras focus on wavelength between 0.9um∼1.7um (In0.53Ga0.47As). Unlike Mid-Wave IR and Long-Wave IR, SWIR is reflected and absorbed by objects, which advantages SWIR imaging higher resolution due to better contrast. SWIR also has excellent imaging quality in low illumination environment and moon light or star light are good emitters outdoor at night. Another primary characteristic of SWIR is high penetration, providing effective imaging under hazy conditions. An Example for night vision between SWIR.
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Design and Realization of High Resolution (640×480) SWIR Image Acquisition System
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Chao, PC, Chen, J, Tsai, C, & Chen, W. "Design and Realization of High Resolution (640×480) SWIR Image Acquisition System." Proceedings of the ASME 2013 Conference on Information Storage and Processing Systems. ASME 2013 Conference on Information Storage and Processing Systems. Santa Clara, California, USA. June 24–25, 2013. V001T09A010. ASME. https://doi.org/10.1115/ISPS2013-2917
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