In order to develop a new structure microwave probe, the fabrication of AFM probe on the GaAs wafer was studied. A waveguide was introduced by evaporating Au film on the top and bottom surfaces of the GaAs AFM probe. A tip having 7 μm high, 2.0 aspect ratio was formed. The dimensions of the cantilever are 250×30×15 μm. The open structure of the waveguide at the tip of the probe was obtained by using FIB fabrication. AFM topographies of a grating sample were measured by using the fabricated GaAs microwave probe and commercial Si AFM probe. The fabricated probe was found having similar capability as the commercial one.
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Fabrication of a GaAs Microwave Probe Used for Atomic Force Microscope
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Ju, Y, Kobayashi, T, & Soyama, H. "Fabrication of a GaAs Microwave Probe Used for Atomic Force Microscope." Proceedings of the ASME 2007 InterPACK Conference collocated with the ASME/JSME 2007 Thermal Engineering Heat Transfer Summer Conference. ASME 2007 InterPACK Conference, Volume 1. Vancouver, British Columbia, Canada. July 8–12, 2007. pp. 963-966. ASME. https://doi.org/10.1115/IPACK2007-33613
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