Advanced collector-up (C-up) heterojunction bipolar transistors (HBTs) with the thermal-via configuration (TVC) have been analyzed using a genetic algorithm (GA). Novel packaging structures are presented and evaluated in detail. With careful optimization, the thermal performance can be maximized by improving the thermal resistance over 40%, and the conventional TVC can be further reduced by 35%. The proposed approach is demonstrated on the multifinger InGaP/GaAs C-up HBT, which is attractive as the active component in power amplifiers. A comparison of measured, finite-element-calculated, and GA-extracted results has been made. Consequently, it is shown that the remarkable thermal management can be achieved with a miniature heat-dissipation design, and the thermally stable InGaP/GaAs C-up HBT should be feasible for implementation in intelligent wireless communication systems.

Issue Section:
Technical Briefs
Keywords:
cooling, gallium arsenide, gallium compounds, genetic algorithms, heterojunction bipolar transistors, III-V semiconductors, indium compounds, semiconductor device packaging, thermal management (packaging), thermal resistance, thermal stability, collector-up heterojunction bipolar transistor (C-up HBT), genetic algorithm (GA), optimization, packaging, thermal
Topics:
Design, Gallium arsenide, Genetic algorithms, Optimization, Packaging, Thermal resistance, Transistors, Thermal stability, Thermal management
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 by American Society of Mechanical Engineers
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