Effects of crystallographic quality of grain boundaries on mechanical and electrical properties were investigated experimentally. A novel method using two parameters of image quality (IQ) and confidence index (CI) values based on electron back-scattering diffraction (EBSD) analysis was proposed in order to evaluate crystallographic quality of grain boundaries. IQ value was defined as an index to evaluate crystallinity in region irradiated with electron beam. CI value determined existence of grain boundaries in the region. It was found that brittle intergranular fatigue fracture occurred in the film without annealing and the film annealed at 200 °C because network of grain boundaries with low crystallinity remained in these films. On the other hand, the film annealed at 400 °C caused only ductile transgranular fatigue fracture because grain boundaries with low crystallinity almost disappeared. From results of measurement of electrical properties, electrical resistivity of copper interconnection annealed at 400 °C with high crystallinity (2.09 × 10−8 Ωm) was low and electron migration (EM) resistance was high compared with an copper interconnection without annealing with low crystallinity (3.33 × 10−8 Ωm). It was clarified that the interconnection with high crystallinity had superior electrical properties. Thus, it was clarified that the crystallographic quality of grain boundaries has a strong correlation of mechanical and electrical reliability.
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September 2015
Research-Article
Effect of Crystallographic Quality of Grain Boundaries on Both Mechanical and Electrical Properties of Electroplated Copper Thin Film Interconnections
Naokazu Murata,
Naokazu Murata
Department of Nanomechanics,
Graduate School of Engineering,
Sendai, Miyagi 980-8579,
e-mail: naokazu.murata@rift.mech.tohoku.ac.jp
Graduate School of Engineering,
Tohoku University
,6-6-11-716, Aoba Aramaki, Aobaku
,Sendai, Miyagi 980-8579,
Japan
e-mail: naokazu.murata@rift.mech.tohoku.ac.jp
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Naoki Saito,
Naoki Saito
Department of Nanomechanics,
Graduate School of Engineering,
Sendai, Miyagi 980-8579,
Graduate School of Engineering,
Tohoku University
,6-6-11-716, Aoba Aramaki, Aobaku
,Sendai, Miyagi 980-8579,
Japan
Search for other works by this author on:
Kinji Tamakawa,
Kinji Tamakawa
Fracture and Reliability Research Institute,
Graduate School of Engineering,
Sendai, Miyagi 980-8579,
Graduate School of Engineering,
Tohoku University
,6-6-11-716, Aoba Aramaki, Aobaku
,Sendai, Miyagi 980-8579,
Japan
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Ken Suzuki,
Ken Suzuki
Fracture and Reliability Research Institute,
Graduate School of Engineering,
Sendai, Miyagi 980-8579,
Graduate School of Engineering,
Tohoku University
,6-6-11-716, Aoba Aramaki, Aobaku
,Sendai, Miyagi 980-8579,
Japan
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Hideo Miura
Hideo Miura
Fracture and Reliability Research Institute,
Graduate School of Engineering,
Sendai, Miyagi 980-8579,
Graduate School of Engineering,
Tohoku University
,6-6-11-716, Aoba Aramaki, Aobaku
,Sendai, Miyagi 980-8579,
Japan
Search for other works by this author on:
Naokazu Murata
Department of Nanomechanics,
Graduate School of Engineering,
Sendai, Miyagi 980-8579,
e-mail: naokazu.murata@rift.mech.tohoku.ac.jp
Graduate School of Engineering,
Tohoku University
,6-6-11-716, Aoba Aramaki, Aobaku
,Sendai, Miyagi 980-8579,
Japan
e-mail: naokazu.murata@rift.mech.tohoku.ac.jp
Naoki Saito
Department of Nanomechanics,
Graduate School of Engineering,
Sendai, Miyagi 980-8579,
Graduate School of Engineering,
Tohoku University
,6-6-11-716, Aoba Aramaki, Aobaku
,Sendai, Miyagi 980-8579,
Japan
Kinji Tamakawa
Fracture and Reliability Research Institute,
Graduate School of Engineering,
Sendai, Miyagi 980-8579,
Graduate School of Engineering,
Tohoku University
,6-6-11-716, Aoba Aramaki, Aobaku
,Sendai, Miyagi 980-8579,
Japan
Ken Suzuki
Fracture and Reliability Research Institute,
Graduate School of Engineering,
Sendai, Miyagi 980-8579,
Graduate School of Engineering,
Tohoku University
,6-6-11-716, Aoba Aramaki, Aobaku
,Sendai, Miyagi 980-8579,
Japan
Hideo Miura
Fracture and Reliability Research Institute,
Graduate School of Engineering,
Sendai, Miyagi 980-8579,
Graduate School of Engineering,
Tohoku University
,6-6-11-716, Aoba Aramaki, Aobaku
,Sendai, Miyagi 980-8579,
Japan
Contributed by the Electronic and Photonic Packaging Division of ASME for publication in the JOURNAL OF ELECTRONIC PACKAGING. Manuscript received July 31, 2011; final manuscript received February 25, 2015; published online March 18, 2015. Assoc. Editor: Madhusudan Iyengar.
J. Electron. Packag. Sep 2015, 137(3): 031001 (8 pages)
Published Online: September 1, 2015
Article history
Received:
July 31, 2011
Revision Received:
February 25, 2015
Online:
March 18, 2015
Citation
Murata, N., Saito, N., Tamakawa, K., Suzuki, K., and Miura, H. (September 1, 2015). "Effect of Crystallographic Quality of Grain Boundaries on Both Mechanical and Electrical Properties of Electroplated Copper Thin Film Interconnections." ASME. J. Electron. Packag. September 2015; 137(3): 031001. https://doi.org/10.1115/1.4029931
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