... conductance are presented. To examine the effects of atomic mixing at the interface on h B D , a series of Cr/Si samples was fabricated subject to different deposition conditions. The varying degrees of atomic mixing were measured with Auger electron spectroscopy. Phonon scattering phenomena in the presence...

... deposition conditions to control the growth around the Cr ∕ Si boundary. The Cr ∕ Si interfaces are characterized with Auger electron spectroscopy. The thermal boundary conductance ( h BD ) is measured with the transient thermoreflectance technique. Values of h BD are found to vary with both the thickness...