Fig. 1 Schematic demonstration of the SERS substrate ( a ) 3D overview and ( b ) top view with “hot spots” located at bottom of the inverted pyramids and also at sharp corners of the edges More about this image found in Schematic demonstration of the SERS substrate ( a ) 3D overview and ( b ) t...

Fig. 2 ( i ) For parallel polarization, cross section view (top images) along the middle of pyramidal pits and top view (bottom images) of the electric field intensity of pyramids of different lengths: ( a ) 500 nM, ( b ) 1 µ M, ( c ) 1.5 µ M, and ( d ) 2 µ M. ( ii ) For diagonal polarization, ... More about this image found in ( i ) For parallel polarization, cross section view (top images) along the ...

Fig. 3 ( a ) Schematic representation of the solid-state superionic stamping (S4) process for patterning silver films [ 26 ] and ( b ) the conceptualized manufacturing pathway for producing SERS substrates More about this image found in ( a ) Schematic representation of the solid-state superionic stamping (S4) ...

Fig. 4 Schematic representation of SI master fabrication outlining the lithography step, nitride etching, anisotropic SI etching, and H 3 PO 4 etching process More about this image found in Schematic representation of SI master fabrication outlining the lithography...

Fig. 5 ( a ) SEM image of si master with inverted pyramids after nitride layer removal and ( b ) optical profilometry line scan of inverted pyramids indicate a depth of 845 nm More about this image found in ( a ) SEM image of si master with inverted pyramids after nitride layer rem...

Fig. 6 Profilometer scans showing the stamp surface transitioning from concave for single-step to nearly flat for double-step hot embossing More about this image found in Profilometer scans showing the stamp surface transitioning from concave for...

Fig. 7 ( a ) SEM images of the upright pyramids on stamp surface resulted from double hot embossing and ( b ) line scan of pattern depth (790 nm) More about this image found in ( a ) SEM images of the upright pyramids on stamp surface resulted from dou...

Fig. 8 Electron micrographs of the pyramid pattern on Ag substrate after S4 P2P etching with 20 µA: ( a ) first print, ( b ) line scanning profile of pattern depth (750 nm), ( c ) sixth print on the Ag substrate showing more defects, and ( d ) pattern depth (710 nm) More about this image found in Electron micrographs of the pyramid pattern on Ag substrate after S4 P2P et...

Fig. 9 EF of 25 patterned substrates, each measured at five different spots More about this image found in EF of 25 patterned substrates, each measured at five different spots

Fig. 10 Spectra from six different spots on one single patterned substrate More about this image found in Spectra from six different spots on one single patterned substrate

Fig. 11 Limit of detection test of the patterned substrates using different concentrations of analyte More about this image found in Limit of detection test of the patterned substrates using different concent...

Fig. 12 Among three batches of fabricated substrates, a comparison of EF across batches to check the consistency of the patterning process More about this image found in Among three batches of fabricated substrates, a comparison of EF across bat...

Fig. 13 Comparison of within-batch variation of EF for three batches (points are connected with a dashed line only for easier visualization) More about this image found in Comparison of within-batch variation of EF for three batches (points are co...

Fig. 14 SERS spectra of commercially available SERS substrate, results in one order magnitude less enhancement than our S4-patterned substrates More about this image found in SERS spectra of commercially available SERS substrate, results in one order...