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Keywords: elemental semiconductors
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Journal Articles
Article Type: Research Papers
J. Eng. Mater. Technol. January 2012, 134(1): 011009.
Published Online: December 8, 2011
... that the developed biaxial tensile test device was able to accurately apply not only uniaxial but also biaxial tensile stress to a single-crystal silicon (SCS) film specimen. 23 05 2011 21 10 2011 08 12 2011 08 12 2011 deformation elemental semiconductors internal stresses Raman...
Journal Articles
Article Type: Research Papers
J. Eng. Mater. Technol. October 2011, 133(4): 041013.
Published Online: October 20, 2011
... atomic force microscopy cantilevers elemental semiconductors nanoindentation semiconductor doping silicon stress-strain relations thermal conductivity thermal resistance thermal conductivity measurement stress/strain micro/nano-scale silicon structures RTD sensor Fourier’s law...
Journal Articles
Article Type: Research Papers
J. Eng. Mater. Technol. January 2008, 130(1): 011002.
Published Online: December 20, 2007
... brittleness cutting ductile-brittle transition elemental semiconductors micromachining plastic deformation sapphire semiconductor technology silicon critical depth of cut specific cutting energy microscribing process hard and brittle materials Scribing process is often applied before...
Journal Articles
Article Type: Special Section On Nanomaterials And Nanomechanics
J. Eng. Mater. Technol. October 2005, 127(4): 457–461.
Published Online: July 12, 2005
... of the material, while slightly elevated due to the prominence of the free surface in the thin layer, is in good agreement with available experimental data. The surface is characterized using an interatomic potential-based C 2 continuous sampling method. 04 02 2005 12 07 2005 silicon elemental...
Journal Articles
Article Type: Special Section On Nanomaterials And Nanomechanics
J. Eng. Mater. Technol. October 2005, 127(4): 462–467.
Published Online: May 8, 2005
.... By use of simple model Monte Carlo simulations, we show that the computed interactions between carbon atoms and DVs lead to self-assembled vacancy lines, in qualitative agreement with recent experimental results. 07 02 2005 08 05 2005 silicon carbon elemental semiconductors vacancies...
Journal Articles
Article Type: Research Papers
J. Eng. Mater. Technol. January 2005, 127(1): 90–96.
Published Online: February 22, 2005
.... Manuscript received January 27, 2004; revision received June 23, 2004. Review conducted by: A. Pelegri. 27 January 2004 23 June 2004 22 02 2005 silicon elemental semiconductors semiconductor thin films micromechanical devices plastic deformation failure (mechanical) creep...